STI22NM60N
MOSFET N-CH 600V 16A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' STI22NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This through-hole component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 16A at 25°C (Tc). Designed for high efficiency, it offers a maximum Power Dissipation (Pd) of 125W (Tc) and a low on-resistance (Rds On) of 220mOhm at 8A and 10V. The STI22NM60N has a typical Gate Charge (Qg) of 44 nC at 10V and an input capacitance (Ciss) of 1330 pF at 50V. The device is packaged in an I2PAK (TO-262-3 Long Leads) and operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supplies, motor control, and industrial power conversion.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 50 V |
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