STI21NM60ND
MOSFET N-CH 600V 17A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI21NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 17 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 220 mOhm at 8.5 A and 10 V gate drive. Key parameters include a maximum power dissipation of 140 W (Tc), gate charge (Qg) of 60 nC at 10 V, and input capacitance (Ciss) of 1800 pF at 50 V. The device operates up to a junction temperature of 150°C and has a maximum gate-source voltage (Vgs) of ±25V. Packaged in an I2PAK (TO-262-3 Long Leads, TO-262AA), the STI21NM60ND is suitable for applications in power supplies, lighting, and motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
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