STI200N6F3
MOSFET N-CH 60V 120A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI200N6F3 is an N-channel STripFET™ MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 330W. Its low on-resistance is specified at 3.8mOhm maximum at 60A and 10V gate-source voltage. The device is housed in a TO-262-3 Long Leads (I2PAK) package, facilitating through-hole mounting. Key electrical characteristics include a gate charge of 101 nC and input capacitance of 6265 pF. Operating temperature ranges from -55°C to 175°C. This MOSFET is suitable for power supply and high-current switching applications across various industrial sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 101 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6265 pF @ 25 V |
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