STI18NM60N
MOSFET N-CH 600V 13A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI18NM60N is an N-Channel Power MOSFET from the MDmesh™ II series, designed for high-efficiency power switching applications. This component features a 600V drain-source breakdown voltage and a continuous drain current of 13A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The STI18NM60N offers a low on-resistance of 285mOhm maximum at 6.5A and 10V Vgs. Key characteristics include a gate charge (Qg) of 35 nC maximum at 10V and input capacitance (Ciss) of 1000 pF maximum at 50V. Packaged in a TO-262-3 Long Leads, I2PAK (TO-262AA) format for through-hole mounting, this device is suitable for demanding applications across various industrial sectors. It operates reliably across an extended temperature range from -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 285mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
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