STI18N65M5
MOSFET N CH 650V 15A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ V series STI18N65M5 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 15 A at 25°C (Tc). With a maximum power dissipation of 110 W (Tc) and a low on-resistance (Rds On) of 220 mOhm at 7.5 A and 10 V, it offers efficient power handling. The STI18N65M5 has a gate charge (Qg) of 31 nC at 10 V and an input capacitance (Ciss) of 1240 pF at 100 V. It is packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting and operates at temperatures up to 150°C (TJ). This device is commonly utilized in power factor correction (PFC) circuits, switch mode power supplies (SMPS), and general high-voltage switching applications within the industrial and automotive sectors.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 100 V |
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