STI17NF25
MOSFET N-CH 250V 17A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI17NF25 is an N-Channel power MOSFET from the STripFET™ II series. This device features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 17 A at 25°C (Tc). It offers a low On-Resistance (Rds On) of 165mOhm maximum at 8.5A and 10V Vgs. The device has a typical Gate Charge (Qg) of 29.5 nC at 10V Vgs and an Input Capacitance (Ciss) of 1000 pF maximum at 25V Vds. With a maximum power dissipation of 90W (Tc), it is suitable for applications requiring robust switching performance. The STI17NF25 is packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting. This component finds application in power supply units and motor control systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 29.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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