STI15NM60N
MOSFET N-CH 600V 14A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ II series N-channel power MOSFET, part number STI15NM60N, features a 600V breakdown voltage and a continuous drain current of 14A at 25°C (Tc). This device offers a low on-resistance of 299mOhm maximum at 7A and 10V Vgs, with a typical gate charge of 37nC at 10V. The input capacitance (Ciss) is rated at a maximum of 1250pF at 50V. Designed for through-hole mounting in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA), this MOSFET boasts a maximum power dissipation of 125W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Applications include power factor correction, switched-mode power supplies, and high voltage switching circuits within the industrial and consumer electronics sectors.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
