STI14NM50N
MOSFET N CH 500V 12A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STI14NM50N is an N-channel Power MOSFET from the MDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 12 A at 25°C (Tc). The STI14NM50N offers a maximum On-Resistance (Rds On) of 320 mOhm at 6 A and 10 V gate drive. With a power dissipation of 90 W (Tc), it is suitable for demanding applications. Key parameters include a typical Gate Charge (Qg) of 27 nC at 10 V and an input capacitance (Ciss) of 816 pF at 50 V. The device is housed in a TO-262 (I2PAK) package with through-hole mounting. This Power MOSFET is commonly utilized in power supply units, lighting, and industrial applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 816 pF @ 50 V |
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