STI12NM50N
MOSFET N-CH 500V 11A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STI12NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 11A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). Featuring a low on-resistance of 380mOhm (max) at 5.5A and 10V Vgs, it also has a typical gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 940 pF at 50V. The device is housed in an I2PAK package (TO-262-3 Long Leads, TO-262AA) for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power factor correction (PFC), switch-mode power supplies (SMPS), and high-voltage applications across industrial and consumer electronics sectors.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
