STI10NM60N
MOSFET N-CH 600V 10A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STI10NM60N is an N-Channel Power MOSFET from the MDmesh™ II series, featuring a 600V drain-source breakdown voltage. This component is designed for high-efficiency applications, offering a continuous drain current of 10A at 25°C and a maximum power dissipation of 70W at 25°C. The STI10NM60N exhibits a low on-resistance of 550mOhm at 4A and 10V gate drive, with a typical gate charge of 19nC at 10V. Its input capacitance (Ciss) is rated at a maximum of 540pF at 50V. Packaged in a TO-262 (I2PAK) through-hole format, this MOSFET operates across a wide temperature range of -55°C to 150°C. It is commonly utilized in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and general-purpose power switching applications across various industrial and consumer electronics sectors.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 50 V |
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