STI10N62K3
MOSFET N-CH 620V 8.4A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics SuperMESH3™ STI10N62K3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 620V and a continuous drain current (Id) of 8.4A at 25°C (Tc). With a maximum power dissipation of 125W (Tc) and a low Rds(on) of 750mOhm at 4A and 10V, it offers efficient switching performance. Key parameters include a Gate Charge (Qg) of 42 nC at 10V and an input capacitance (Ciss) of 1250 pF at 50V. The STI10N62K3 utilizes MOSFET technology and is housed in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA) suitable for through-hole mounting. This device is commonly employed in power factor correction, switch-mode power supplies, and industrial motor control applications. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
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