STH80N10LF7-2AG
MOSFET N-CH 100V 80A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ STH80N10LF7-2AG is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 100 V and offers a high continuous drain current of 80 A at 25°C (Tc). With a low on-resistance of 10 mOhm maximum at 40 A and 10 V, it minimizes conduction losses. The STH80N10LF7-2AG is constructed using advanced STripFET™ technology, ensuring excellent efficiency. It is qualified to AEC-Q101 standards, making it suitable for automotive applications, as well as industrial power supplies and motor control systems. The device is supplied in an H2PAK-2 surface mount package (TO-263-3, D2PAK) and is available on tape and reel for automated assembly. Key electrical characteristics include a maximum power dissipation of 110 W (Tc) and a gate charge (Qg) of 28.3 nC at 4.5 V.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
| Qualification | AEC-Q101 |
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