STH80N10F7-2
MOSFET N-CH 100V 80A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH80N10F7-2 is a 100V N-Channel MOSFET from the DeepGATE™, STripFET™ VII series. This device features a low on-resistance of 9.5mOhm at 40A and 10V Vgs, with a continuous drain current capability of 80A at 25°C. The STH80N10F7-2 offers a maximum power dissipation of 110W and a junction temperature range of -55°C to 175°C. It is supplied in an H2PAK-2 surface mount package (TO-263-3, D2PAK) and is available on tape and reel. The typical applications for this MOSFET include power switching and motor control within the automotive and industrial sectors. Key electrical characteristics include a gate charge of 45 nC @ 10V and input capacitance of 3100 pF @ 50V.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 50 V |
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