STH47N60DM6-2AG
POWER TRANSISTORSManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH47N60DM6-2AG is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 36A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The STH47N60DM6-2AG offers a low on-resistance (Rds On) of 80mOhm maximum at 18A and 10V gate drive. Key parameters include a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 2350 pF at 100V. It is housed in an H2Pak-2 surface mount package, suitable for demanding thermal environments. This component is AEC-Q101 qualified, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STL12N65M2
MOSFET N-CH 650V 5A POWERFLAT HV
STP270N04
MOSFET N-CH 40V 120A TO220AB
