STH410N4F7-6AG
MOSFET N-CH 40V 200A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ F7 series N-Channel Power MOSFET, part number STH410N4F7-6AG. This 40V device features a low Rds(on) of 1.1mOhm at 90A and 10V Vgs, with a continuous drain current of 200A at 25°C. The H2PAK-6 package offers a robust thermal performance with a maximum power dissipation of 365W at 25°C. Designed for demanding applications, this AEC-Q101 qualified component is suitable for automotive and high-power switching solutions. Key parameters include a gate charge of 141nC at 10V and input capacitance of 11500pF at 25V. The operating temperature range is -55°C to 175°C. Supplied in Tape & Reel packaging.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 365W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
STL130N6F7
MOSFET N-CH 60V 130A POWERFLAT
STB130N6F7
MOSFET N-CH 60V 80A D2PAK
STL135N8F7AG
MOSFET N-CH 80V 130A POWERFLAT
