STH400N4F6-6
MOSFET N-CH 40V 180A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH400N4F6-6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This AEC-Q101 qualified component features a 40V drain-to-source voltage and a continuous drain current of 180A at 25°C (Tc). The device offers a low on-resistance of 1.15mOhm maximum at 60A and 10V, supported by a 10V drive voltage. Designed for high-power applications, it has a maximum power dissipation of 300W (Tc). The STH400N4F6-6 is housed in an H2PAK-6 surface mount package (TO-263-7, D2PAK) and is supplied on tape and reel (TR). Key parameters include a gate charge of 404 nC max at 10V and input capacitance of 20500 pF max at 25V. This component is suitable for automotive applications.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 404 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20500 pF @ 25 V |
| Qualification | AEC-Q101 |
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