STH400N4F6-2
MOSFET N-CH 40V 180A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STH400N4F6-2 is a high-performance N-Channel Power MOSFET from the DeepGATE™ and STripFET™ VI series. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 180A at 25°C, with a maximum power dissipation of 300W. It offers a low on-resistance of 1.15mOhm at 60A and 10V gate-source voltage, achieved through advanced STripFET™ VI technology. The device is housed in an H2PAK-2 (TO-263-3, D2PAK) surface mount package and is qualified to AEC-Q101 standards, making it suitable for demanding automotive applications. Key electrical parameters include a gate charge of 404 nC at 10V and input capacitance of 20500 pF at 25V. The operating temperature range is -55°C to 175°C.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 404 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20500 pF @ 25 V |
| Qualification | AEC-Q101 |
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