STH320N4F6-6
MOSFET N-CH 40V 200A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH320N4F6-6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component offers a 40V drain-source breakdown voltage and a continuous drain current capability of 200A at 25°C (Tc). Featuring a low on-resistance of 1.3mOhm maximum at 80A and 10V gate-source voltage, this device is designed for efficient power switching applications. The STH320N4F6-6 is housed in an H2PAK-6 surface-mount package, facilitating thermal management with a maximum power dissipation of 300W (Tc). Key electrical characteristics include a gate charge (Qg) of 240 nC maximum at 10V and input capacitance (Ciss) of 13800 pF maximum at 15V. This AEC-Q101 qualified MOSFET is suitable for demanding automotive applications.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 15 V |
| Qualification | AEC-Q101 |
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