STH320N4F6-2
MOSFET N-CH 40V 200A H2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH320N4F6-2 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 200A at 25°C, with a maximum power dissipation of 300W at the same temperature. The low on-resistance, specified as 1.3mOhm maximum at 80A and 10V gate-source voltage, is achieved through STMicroelectronics' advanced trench technology. Designed for demanding automotive applications, this AEC-Q101 qualified component is housed in an H2PAK (TO-263-3, D2PAK) surface mount package, supplied on tape and reel. Key parameters include a maximum gate charge (Qg) of 240 nC at 10V and an input capacitance (Ciss) of 13800 pF at 15V. The operating temperature range is from -55°C to 175°C.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), Variant |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 15 V |
| Qualification | AEC-Q101 |
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