STH315N10F7-2
MOSFET N-CH 100V 180A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH315N10F7-2 is an N-channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device offers a 100V drain-source voltage and a continuous drain current capability of 180A at 25°C, with a maximum power dissipation of 315W (Tc). Key parameters include a low on-resistance of 2.3mOhm at 60A and 10V, and a gate charge of 180nC at 10V. The device features a high maximum junction temperature of 175°C and robust input capacitance of 12800pF. Designed for demanding applications, it is qualified to AEC-Q101 standards and suitable for automotive, industrial, and power supply applications. The component is supplied in a surface mount H2PAK-2 package, presented on tape and reel. Gate-source voltage limits are ±20V.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12800 pF @ 25 V |
| Qualification | AEC-Q101 |
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