STH310N10F7-6
MOSFET N-CH 100V 180A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH310N10F7-6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 180A at 25°C (Tc). With a low on-resistance (Rds On) of 2.5mOhm at 60A and 10V, it offers efficient power handling with a maximum power dissipation of 315W (Tc). The STH310N10F7-6 is housed in an H2PAK-6 (TO-263-7, D2PAK) surface-mount package, suitable for demanding applications. Key parameters include a gate charge (Qg) of 180nC at 10V and input capacitance (Ciss) of 12800pF at 25V. This component is utilized in automotive, industrial power, and renewable energy systems. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12800 pF @ 25 V |
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