STH300NH02L-6
MOSFET N-CH 24V 180A H2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ III series N-Channel Power MOSFET, part number STH300NH02L-6. This device features a 24V drain-to-source breakdown voltage and a continuous drain current capability of 180A at 25°C (Tc). With a low on-resistance of 1.2mOhm maximum at 80A and 10V Vgs, it offers efficient power handling up to 300W (Tc). The STH300NH02L-6 is designed for surface mounting in the H2PAK (TO-263-7, D2PAK) package, suitable for demanding applications. Key parameters include a gate charge of 109 nC at 10V Vgs and input capacitance of 7050 pF at 15V Vds. This AEC-Q101 qualified component is ideal for automotive applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | H2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7050 pF @ 15 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
STD95N4F3
MOSFET N-CH 40V 80A DPAK
STL8DN6LF3
MOSFET 2N-CH 60V 20A POWERFLAT
STP200NF03
MOSFET N-CH 30V 120A TO220AB
