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STH290N4F6-6AG

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STH290N4F6-6AG

MOSFET N-CH 40V 180A H2PAK-6

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STH290N4F6-6AG, is a 40V device designed for high-current applications. This AEC-Q101 qualified component features a low on-resistance of 1.7mOhm at 45A and 10V Vgs, facilitating efficient power transfer. With a continuous drain current of 180A at 25°C and a maximum power dissipation of 300W, it is suitable for demanding automotive and industrial power management systems. The device utilizes STripFET™ technology for enhanced performance and reliability. It is supplied in an H2PAK-6 (TO-263-7, D2PAK) surface mount package, ideal for automated assembly. Key electrical characteristics include 115 nC gate charge and 7380 pF input capacitance, enabling fast switching speeds. Operating temperature range is -55°C to 175°C.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 45A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageH2PAK-6
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7380 pF @ 25 V
QualificationAEC-Q101

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