STH290N4F6-2AG
MOSFET N-CH 40V 180A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STH290N4F6-2AG, offers a 40V Vds rating and 180A continuous drain current capability at 25°C. This device features a low Rds(on) of 1.7mOhm at 45A and 10V Vgs, with a maximum gate charge of 115 nC at 10V. Designed for demanding applications, it boasts a maximum power dissipation of 300W at the case temperature. The STH290N4F6-2AG is housed in an H2PAK-2 surface mount package, suitable for high-power density designs. Its AEC-Q101 qualification makes it ideal for automotive applications, including electric vehicle powertrains, power steering systems, and advanced driver-assistance systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7380 pF @ 25 V |
| Qualification | AEC-Q101 |
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