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STH275N8F7-6AG

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STH275N8F7-6AG

MOSFET N-CH 80V 180A H2PAK-6

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STripFET™ F7 series N-channel MOSFET, part number STH275N8F7-6AG, offers a robust solution for high-power applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 180A at 25°C (Tc). With a low on-resistance (Rds On) of 2.1mOhm at 90A and 10V, it minimizes conduction losses. The device is rated for 315W (Tc) power dissipation and utilizes a surface mount H2PAK-6 package. Key electrical characteristics include a gate charge (Qg) of 193 nC at 10V and input capacitance (Ciss) of 13600 pF at 50V. Designed for demanding environments, this MOSFET operates across a temperature range of -55°C to 175°C (TJ) and meets AEC-Q101 qualification, making it suitable for automotive and industrial power systems. It supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4.5V at 250µA.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs2.1mOhm @ 90A, 10V
FET Feature-
Power Dissipation (Max)315W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageH2PAK-6
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13600 pF @ 50 V
QualificationAEC-Q101

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