STH275N8F7-2AG
MOSFET N-CH 80V 180A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ F7 series N-Channel Power MOSFET, part number STH275N8F7-2AG, offers an 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 180A at 25°C (Tc). This device features a low on-resistance of 2.1mOhm maximum at 90A and 10V Vgs, a gate charge (Qg) of 193 nC maximum at 10V Vgs, and input capacitance (Ciss) of 13600 pF maximum at 50V Vds. With a maximum power dissipation of 315W (Tc), it is suitable for demanding applications. The MOSFET is housed in an H2Pak-2 surface mount package, specifically TO-263-3, D2PAK (2 Leads + Tab), TO-263AB. Qualified to AEC-Q101 standards and designated as Automotive grade, this component is designed for use in automotive power management and electric vehicle systems. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 193 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 50 V |
| Qualification | AEC-Q101 |
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