STH270N8F7-6
MOSFET N-CH 80V 180A H2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH270N8F7-6 is an 80V N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component offers a continuous drain current of 180A (Tc) and a maximum power dissipation of 315W (Tc). It features a low on-resistance of 2.1mOhm at 90A and 10V gate drive. The H2PAK package, a TO-263-7 variant, is designed for surface mounting and supports efficient thermal management. Key electrical characteristics include a gate charge of 193 nC (max) at 10V and an input capacitance of 13600 pF (max) at 50V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for high-power switching applications in automotive and industrial power supplies.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 193 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 50 V |
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