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STH270N8F7-2

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STH270N8F7-2

MOSFET N-CH 80V 180A H2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ VII DeepGATE™ N-Channel Power MOSFET, part number STH270N8F7-2, offers an 80V drain-source voltage and a continuous drain current of 180A at 25°C (Tc), with a maximum power dissipation of 315W (Tc). This device features a low Rds(on) of 2.1mOhm at 90A and 10V gate drive. Designed with a 10V drive voltage, it has a gate charge of 193 nC (Max) at 10V and an input capacitance of 13600 pF (Max) at 50V. The STH270N8F7-2 is housed in an H2PAK package suitable for surface mounting, with operating temperatures ranging from -55°C to 175°C (TJ). This MOSFET is commonly utilized in high-power applications within the automotive and industrial sectors.

Additional Information

Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs2.1mOhm @ 90A, 10V
FET Feature-
Power Dissipation (Max)315W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageH2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13600 pF @ 50 V

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