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STH270N4F3-6

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STH270N4F3-6

MOSFET N-CH 40V 180A H2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ III series N-Channel Power MOSFET. This device features a 40V drain-source voltage rating and a continuous drain current capability of 180A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The STH270N4F3-6 offers a low on-resistance of 1.7mOhm at 80A and 10V gate drive. Designed for high-efficiency switching applications, it is qualified to AEC-Q101 standards, making it suitable for automotive applications. The H2PAK package (TO-263-7) provides a surface mount solution with a 6-lead configuration plus tab. Key parameters include a gate charge of 150nC (max) at 10V and input capacitance of 7400pF (max) at 25V. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageH2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7400 pF @ 25 V
QualificationAEC-Q101

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