STH270N4F3-2
MOSFET N-CH 40V 180A H2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH270N4F3-2, an N-Channel STripFET™ III Power MOSFET, features a 40V drain-source voltage and a continuous drain current of 180A at 25°C (Tc). This AEC-Q101 qualified component offers a low on-resistance of 1.7mOhm at 80A and 10V. The device supports a gate drive voltage up to 10V and has a maximum gate-source voltage of ±20V. With a maximum power dissipation of 300W (Tc), it is designed for demanding applications. The STH270N4F3-2 is housed in an H2PAK package, suitable for surface mounting. Key electrical parameters include an input capacitance (Ciss) of 7400pF at 25V and a gate charge (Qg) of 150nC at 10V. This component is utilized in automotive applications.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), Variant |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 25 V |
| Qualification | AEC-Q101 |
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