STH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ F6 N-Channel Power MOSFET, part number STH265N6F6-2AG, offers robust performance with a 60V drain-source voltage and a continuous drain current of 180A at 25°C (Tc). This AEC-Q101 qualified component features a low on-resistance of 2.1mOhm at 60A and 10V Vgs, and a maximum power dissipation of 300W (Tc). Designed for demanding applications, it provides a gate charge (Qg) of 183 nC at 10V and input capacitance (Ciss) of 11800 pF at 25V. The H2PAK-2 (TO-263-3, D2PAK) surface mount package ensures efficient thermal management and is supplied on tape and reel. This MOSFET is suitable for automotive and industrial power conversion systems.
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11800 pF @ 25 V |
| Qualification | AEC-Q101 |
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