STH260N6F6-2
MOSFET N-CH 60V 180A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH260N6F6-2 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This device features a 60V drain-source voltage and a continuous drain current of 180A at 25°C, with a maximum power dissipation of 300W. The on-resistance (Rds On) is specified at a low 2.4mOhm at 60A and 10V gate drive. Key characteristics include a maximum gate charge (Qg) of 183 nC at 10V and input capacitance (Ciss) of 11800 pF at 25V. The STH260N6F6-2 is housed in an H2Pak-2 (TO-263-3, D2PAK) surface mount package and operates within a temperature range of -55°C to 175°C. This component is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11800 pF @ 25 V |
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