STH250N55F3-6
MOSFET N-CH 55V 180A H2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STH250N55F3-6 is a STripFET™ III series N-Channel power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and offers a continuous drain current (Id) of 180A at 25°C with a maximum power dissipation of 300W. Its low on-resistance (Rds On) is rated at 2.6mOhm at 60A and 10V drive voltage. The component is housed in an H2PAK (TO-263-7) surface mount package and operates across a temperature range of -55°C to 175°C. Key electrical characteristics include a maximum gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 6800 pF at 25V. This MOSFET is suitable for use in power conversion, automotive, and industrial equipment.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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