STH245N75F3-6
MOSFET N-CH 75V 180A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ F3 series N-Channel Power MOSFET, part number STH245N75F3-6. This device features a 75V drain-source voltage and a continuous drain current of 180A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The Rds(on) is specified at a maximum of 3mOhm at 90A and 10V gate-source voltage. The gate charge (Qg) is 87 nC maximum at 10V. Designed for surface mount applications, it utilizes the H2PAK-6 package (TO-263-7, D2PAK). This component is AEC-Q101 qualified and suitable for automotive applications. Key electrical parameters include an input capacitance (Ciss) of 6800 pF maximum at 25V. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ F3RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
STL7N6LF3
MOSFET N-CH 60V 20A POWERFLAT
STL8N6LF3
MOSFET N-CH 60V 20A POWERFLAT
STH185N10F3-6
MOSFET N-CH 100V 180A H2PAK-6
