STH240N75F3-6
MOSFET N-CH 75V 180A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ III series N-Channel Power MOSFET, part number STH240N75F3-6. This 75V device features a low Rds(on) of 3mOhm at 10V Vgs and 90A Id, enabling high-efficiency power conversion. With a continuous drain current capability of 180A at 25°C (Tc) and a maximum power dissipation of 300W (Tc), it is suitable for demanding applications. The H2PAK-6 surface mount package offers robust thermal performance. Key electrical parameters include a gate charge (Qg) of 87nC at 10V and input capacitance (Ciss) of 6800pF at 25V. This MOSFET is commonly utilized in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
Request a Quote
Clients Also Buy
STD95N4F3
MOSFET N-CH 40V 80A DPAK
STL8DN6LF3
MOSFET 2N-CH 60V 20A POWERFLAT
STP200NF03
MOSFET N-CH 30V 120A TO220AB
