STH240N10F7-6
MOSFET N-CH 100V 180A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ F7 N-Channel Power MOSFET, part number STH240N10F7-6, offers 100V drain-source breakdown voltage and 180A continuous drain current at 25°C (Tc). This device features a low on-resistance of 2.5mOhm maximum at 60A and 10V Vgs, with a gate charge of 160 nC maximum at 10V. Designed for efficient power management, it boasts a maximum power dissipation of 300W at 25°C (Tc) and operates across a temperature range of -55°C to 175°C. The H2PAK-6 surface mount package (TO-263-7, D2PAK) provides robust thermal performance. This component is suitable for applications in industrial power supplies, electric vehicle charging, and power factor correction circuits.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11550 pF @ 25 V |
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