STH240N10F7-2
MOSFET N-CH 100V 180A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STH240N10F7-2, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 180A at 25°C (Tc). This device features a low on-resistance of 2.5mOhm maximum at 60A and 10V, facilitated by a gate drive of 10V. With a maximum power dissipation of 300W (Tc), it is suitable for demanding applications. The STH240N10F7-2 utilizes advanced MOSFET technology for efficient power switching. Key electrical characteristics include a gate charge (Qg) of 160 nC at 10V and an input capacitance (Ciss) of 11550 pF at 25V. The component is housed in an H2PAK-2 (TO-263-3, D2PAK) surface mount package, supplied on tape and reel. This MOSFET is commonly employed in power supply units, automotive systems, and industrial motor control applications.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11550 pF @ 25 V |
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