STH210N75F6-2
MOSFET N-CH 75V 180A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH210N75F6-2 is a 75V N-Channel STripFET™ VI Power MOSFET in an H2PAK-2 package, offering a continuous drain current of 180A at 25°C and a maximum power dissipation of 300W. This device features a low on-resistance of 2.8mOhm at 90A and 10V drive voltage, with a gate charge of 171 nC at 10V. The input capacitance (Ciss) is rated at 11800 pF at 25V. Designed for surface mounting, the STH210N75F6-2 operates within a temperature range of -55°C to 175°C. Its robust performance makes it suitable for demanding applications in automotive, industrial power, and power supply sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 171 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11800 pF @ 25 V |
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