STH200N10WF7-2
N-CHANNEL 100 V, 4.8 MOHM TYP.,Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics N-Channel Power MOSFET, part number STH200N10WF7-2, offers a 100V drain-source breakdown voltage and a low 4.8 mOhm typical on-resistance at 10V gate drive. This device features a continuous drain current capability of 180A (Tc) and a maximum power dissipation of 340W (Tc). Designed for high-efficiency power conversion, it is suitable for demanding applications in automotive and industrial sectors. The MOSFET is packaged in an H2PAK-2 (TO-263-3, D2PAK) for surface mounting, facilitating robust thermal management. Key electrical parameters include a 93 nC gate charge and 4430 pF input capacitance. It operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4430 pF @ 25 V |
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