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STH185N10F3-2

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STH185N10F3-2

MOSFET N-CH 100V 180A H2PAK-2

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STH185N10F3-2 is a high-performance N-Channel Power MOSFET from the STripFET™ F3 series. This device features a 100 V drain-source voltage (Vds) and a continuous drain current (Id) capability of 180 A at 25°C (Tc). With a maximum power dissipation of 315 W (Tc) and a low on-resistance (Rds(on)) of 4.5 mOhm at 60 A and 10 V, it is engineered for efficient power handling. The STH185N10F3-2 is housed in an H2PAK-2 (TO-263-3, D2PAK) surface-mount package, suitable for demanding thermal management. Key electrical characteristics include a gate charge (Qg) of 114.6 nC at 10 V and input capacitance (Ciss) of 6665 pF at 25 V. Designed for automotive applications, this component meets AEC-Q101 qualification standards. It operates reliably across a temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is utilized in automotive power systems and high-current switching applications.

Additional Information

Series: STripFET™ F3RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)315W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageH2Pak-2
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6665 pF @ 25 V
QualificationAEC-Q101

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