STH180N4F6-2
MOSFET N-CH 40V 120A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH180N4F6-2, an N-Channel STripFET™ F6 series power MOSFET, features a 40V drain-source voltage and a continuous drain current capability of 120A at 25°C (Tc). This device boasts a low on-resistance of 2.4mOhm maximum at 60A and 10V gate drive, with a maximum gate charge of 130 nC at 10V. Its high power dissipation of 190W (Tc) and operating temperature range of -55°C to 175°C make it suitable for demanding applications. Packaged in an H2PAK-2 (TO-263-3, D2PAK) for surface mounting and supplied on tape & reel, this MOSFET is utilized in automotive and industrial power supply designs.
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7735 pF @ 25 V |
Request a Quote
Clients Also Buy
STS8DN6LF6AG
MOSFET 2N-CH 60V 8A 8SO
STL42P4LLF6
MOSFET P-CH 40V 42A POWERFLAT
STL60P4LLF6
MOSFET P-CH 40V 60A POWERFLAT
