STH180N10F3-6
MOSFET N-CH 100V 180A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ III N-Channel Power MOSFET, part number STH180N10F3-6, offers a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 180A at 25°C (Tc). This device features a low on-resistance of 4.5mOhm (max) at 60A and 10V gate-source voltage (Vgs). The STH180N10F3-6 is packaged in an H2PAK-6 (TO-263-7, D2PAK) for surface mounting and supports a maximum power dissipation of 315W (Tc). Key electrical characteristics include a gate charge (Qg) of 114.6 nC (max) at 10V and input capacitance (Ciss) of 6665 pF (max) at 25V. It operates within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 315W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 114.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6665 pF @ 25 V |
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