STH175N4F6-2AG
MOSFET N-CH 40V 120A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ F6 series N-Channel Power MOSFET, part number STH175N4F6-2AG, offers a 40V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This device features a maximum on-resistance of 2.4mOhm at 60A and 10V Vgs, with a gate charge of 130nC at 10V. The H2PAK-2 surface mount package provides a robust thermal solution for demanding applications. Engineered for automotive applications, this MOSFET meets AEC-Q101 qualification standards. It is suitable for power management, automotive systems, and industrial motor control where high efficiency and reliability are paramount. The device operates across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7735 pF @ 20 V |
| Qualification | AEC-Q101 |
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