STH170N8F7-2
MOSFET N-CH 80V 120A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STH170N8F7-2 is an N-Channel Power MOSFET from the STripFET™ F7 series. This device features an 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The low on-resistance (Rds On) of 3.7mOhm at 60A and 10V gate-source voltage (Vgs) makes it suitable for high-current applications. It has a gate charge (Qg) of 120 nC at 10V Vgs and an input capacitance (Ciss) of 8710 pF at 40V Vds. The STH170N8F7-2 is housed in an H2PAK-2 surface mount package, specifically a TO-263-3, D2PAK configuration. Its operating temperature range is -55°C to 175°C (TJ). This component is utilized in industries such as automotive and industrial power systems.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8710 pF @ 40 V |
Request a Quote
Clients Also Buy
STL130N6F7
MOSFET N-CH 60V 130A POWERFLAT
STB130N6F7
MOSFET N-CH 60V 80A D2PAK
STL135N8F7AG
MOSFET N-CH 80V 130A POWERFLAT
