STH15NB50FI
MOSFET N-CH 500V 10.5A ISOWAT218Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH15NB50FI is a PowerMESH™ N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 10.5 A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 360 mOhm at 7.5 A and 10 V. With a maximum power dissipation of 80 W (Tc) and an operating junction temperature of 150°C, it is suitable for high-power switching applications. Key parameters include Gate Charge (Qg) of 80 nC at 10 V and Input Capacitance (Ciss) of 3400 pF at 25 V. The STH15NB50FI is housed in an ISOWATT-218 package for through-hole mounting. This MOSFET is commonly utilized in power supply units, industrial automation, and renewable energy systems.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOWATT-218-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ISOWATT-218 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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