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STH15NB50FI

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STH15NB50FI

MOSFET N-CH 500V 10.5A ISOWAT218

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STH15NB50FI is a PowerMESH™ N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 10.5 A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 360 mOhm at 7.5 A and 10 V. With a maximum power dissipation of 80 W (Tc) and an operating junction temperature of 150°C, it is suitable for high-power switching applications. Key parameters include Gate Charge (Qg) of 80 nC at 10 V and Input Capacitance (Ciss) of 3400 pF at 25 V. The STH15NB50FI is housed in an ISOWATT-218 package for through-hole mounting. This MOSFET is commonly utilized in power supply units, industrial automation, and renewable energy systems.

Additional Information

Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseISOWATT-218-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Rds On (Max) @ Id, Vgs360mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageISOWATT-218
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 25 V

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