STH150N10F7-2
MOSFET N-CH 100V 110A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH150N10F7-2 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device offers a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 110A at 25°C (Tc). It features a low on-resistance of 3.9mOhm maximum at 55A, 10V, and a maximum power dissipation of 250W (Tc). The Gate Charge (Qg) is 117 nC maximum at 10V, with an Input Capacitance (Ciss) of 8115 pF maximum at 50V. Designed for surface mounting, it is housed in an H2PAK-2 package (TO-263-3, D2PAK). This component is suitable for various industrial applications including power supplies, motor control, and automotive systems. It operates within an ambient temperature range of -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8115 pF @ 50 V |
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