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STH150N10F7-2

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STH150N10F7-2

MOSFET N-CH 100V 110A H2PAK-2

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STH150N10F7-2 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device offers a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 110A at 25°C (Tc). It features a low on-resistance of 3.9mOhm maximum at 55A, 10V, and a maximum power dissipation of 250W (Tc). The Gate Charge (Qg) is 117 nC maximum at 10V, with an Input Capacitance (Ciss) of 8115 pF maximum at 50V. Designed for surface mounting, it is housed in an H2PAK-2 package (TO-263-3, D2PAK). This component is suitable for various industrial applications including power supplies, motor control, and automotive systems. It operates within an ambient temperature range of -55°C to 175°C (TJ).

Additional Information

Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Rds On (Max) @ Id, Vgs3.9mOhm @ 55A, 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageH2Pak-2
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8115 pF @ 50 V

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