STH145N8F7-2AG
MOSFET N-CH 80V 90A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ F7 series N-Channel Power MOSFET, part number STH145N8F7-2AG. This 80V device features a low Rds(on) of 4mOhm at 45A and 10V Vgs, with a continuous drain current capability of 90A at 25°C. Designed for high-power applications, it offers a maximum power dissipation of 200W. Key parameters include a gate charge of 96nC at 10V and input capacitance of 6340pF at 40V. The MOSFET is housed in an H2PAK-2 (TO-263-3, D2PAK) surface mount package, suitable for demanding thermal management. This component is AEC-Q101 qualified and targeted for automotive applications, including power management and motor control systems.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6340 pF @ 40 V |
| Qualification | AEC-Q101 |
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