STH140N8F7-2
MOSFET N-CH 80V 90A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STH140N8F7-2 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous drain current (Id) capability of 90A at 25°C (Tc), with a maximum power dissipation of 200W (Tc). The low on-resistance (Rds On) is specified as 4mOhm maximum at 45A and 10V Vgs. The device utilizes a surface mount H2PAK-2 (TO-263-3, D2PAK) package for efficient thermal management. Key electrical parameters include a gate charge of 96 nC at 10V Vgs and an input capacitance (Ciss) of 6340 pF at 40V Vds. This MOSFET is suitable for applications in automotive and industrial power systems requiring high current handling and low conduction losses. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6340 pF @ 40 V |
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