STH140N6F7-6
MOSFET N-CH 60V 80A H2PAK-6Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STH140N6F7-6, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). This device features a low on-resistance of 3.2mOhm maximum at 40A and 10V Vgs. The STH140N6F7-6 is housed in an H2PAK-6 surface mount package, providing efficient thermal management with a maximum power dissipation of 158W (Tc) and an operating junction temperature of 175°C. Key parameters include a gate charge of 55nC (max) at 10V Vgs and input capacitance of 3100pF (max) at 25V Vds. This component finds application in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2PAK-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
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