STH140N6F7-2
MOSFET N-CH 60V 80A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STH140N6F7-2 is a 60V N-Channel power MOSFET from the DeepGATE™, STripFET™ VII series. This device features a maximum continuous drain current of 80A (Tc) and a low on-resistance of 3mOhm at 40A, 10V. The STH140N6F7-2 is designed for high-efficiency power switching applications, offering a maximum power dissipation of 158W (Tc). Key specifications include a gate charge of 40 nC @ 10V and input capacitance of 2700 pF @ 25V. The component is housed in an H2PAK-2 (TO-263-3, D2PAK) surface mount package, suitable for demanding thermal management. This MOSFET is commonly utilized in automotive, industrial power supplies, and high-power conversion systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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